nMOSFET-symbol with parameters

Threshold Voltage (vth0, V)= 0.332 Channel length modulation parameter(pclm) : 0.1000000 Body bias effect parameter (K1 V1/2) 0.53 S/D field oxide side wall junction capacitance per unit length at zero bias (CJSW, F/m) 5x10-10 Source/drain field oxide sidewall junction builtin potential (PBSW V) 1.0 Source/drain (S/D) bottom junction capacitance per unit area at zero bias (CJ, F/m²) 5x10-4 S/D bottom junction capacitance grading coefficient (mj) 0.5 Bottom junction built-in potential (PB, V) 1.0 Saturation current density of bottom junction diode (js A/m2) 10-4 Substrate doping concentration (NSUB, cm-3) 6.0x1016 Mobility at room temperature (u0, nMOSFET, m2/V-s): 0.0670 Mobility at room temperature (u0, pMOSFET, cm2/V-s): 0.0250